Измерительные приборы
-
Анализатор полупроводников
Код товара:
DCA55
Описание:
Features:- automatic component type identification
- automatic pinout identification
- special feature identification such as protection diodes and resistor shunts
- bipolar transistors: gain and leakage current measurements, silicon and germanium detection
- gate threshold measurement for Enhancement Mode MOSFETs
- semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions
- automatic and manual power-off
Specifications:
- peak test current into short circuit: -5.5mA ~ 5.5mA
- peak test voltage across open circuit: -5.1V ~ 5.1V
- transistor:
- gain range (Hfe): 4 ~ 65000
- gain accuracy: ±3% ±5 Hfe
- Vceo test voltage: 2.0V ~ 3.0V
- Vbe accuracy: -2%-20mV ~ +2%+20mV
- VBE for Darlington (shunted): 0.95V ~ 1.80V (0.75V ~ 1.80V)
- base-emitter shunt threshold: 50kOhm ~ 70kOhm
- BJT collector test current: 2.45mA ~ 2.55mA
- BJT acceptable leakage: 0.7mA
- MOSFET:
- gate threshold range: 0.1V ~ 5.0V
- threshold accuracy: -2%-20mV ~ +2%+20mV
- drain test current: 2.45mA ~ 255mA
- gate resistance: 8kOhm
- depletion drain test current: 4.5mA
- JFET drain-source test current: 0.5mA ~ 5.5mA
- SCR/Triac:
- gate test current: 4.5mA
- load test current: 5.0mA
- Diode:
- test current: 5.0mA
- voltage accuracy: -2%-20mV ~ +2%+20mV
- Vf for LED identification: 1.50V ~ 4.00V
- short circuit threshold: 10Ohm
- Battery:
- type: MN21 / L1028 / GP23A 12V alkaline
- voltage range: 7.50V ~ 12V
- warning threshold: 8.25V
- dimensions: 103x70x20mm
Documents:По ЗаказуЦена с НСО
118.45 €