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  • Анализатор полупроводников

    Код товара:

    DCA55

    Описание:


    Features:

    1. automatic component type identification
    2. automatic pinout identification
    3. special feature identification such as protection diodes and resistor shunts
    4. bipolar transistors: gain and leakage current measurements, silicon and germanium detection
    5. gate threshold measurement for Enhancement Mode MOSFETs
    6. semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions
    7. automatic and manual power-off

    Specifications:

    1. peak test current into short circuit: -5.5mA ~ 5.5mA
    2. peak test voltage across open circuit: -5.1V ~ 5.1V
    3. transistor:
      1. gain range (Hfe): 4 ~ 65000
      2. gain accuracy: ±3% ±5 Hfe
      3. Vceo test voltage: 2.0V ~ 3.0V
      4. Vbe accuracy: -2%-20mV ~ +2%+20mV
      5. VBE for Darlington (shunted): 0.95V ~ 1.80V (0.75V ~ 1.80V)
      6. base-emitter shunt threshold: 50kOhm ~ 70kOhm
      7. BJT collector test current: 2.45mA ~ 2.55mA
      8. BJT acceptable leakage: 0.7mA
      9. MOSFET:
        1. gate threshold range: 0.1V ~ 5.0V
        2. threshold accuracy: -2%-20mV ~ +2%+20mV
        3. drain test current: 2.45mA ~ 255mA
        4. gate resistance: 8kOhm
      10. depletion drain test current: 4.5mA
      11. JFET drain-source test current: 0.5mA ~ 5.5mA
    4. SCR/Triac:
      1. gate test current: 4.5mA
      2. load test current: 5.0mA
    5. Diode:
      1. test current: 5.0mA
      2. voltage accuracy: -2%-20mV ~ +2%+20mV
      3. Vf for LED identification: 1.50V ~ 4.00V
      4. short circuit threshold: 10Ohm
    6. Battery:
      1. type: MN21 / L1028 / GP23A 12V alkaline
      2. voltage range: 7.50V ~ 12V
      3. warning threshold: 8.25V
    7. dimensions: 103x70x20mm
    Documents:
    По Заказу

    Цена с НСО

    118.45 €